Abstract
For the III-V intermetallic compounds, the <111> directions are polar axes. The shape of etch pits bounded by crystallographic planes and the presence or absence of pits at dislocations are influenced by the effect of the polar axes on the etch rates. Studies of these effects are reported for several etches on InSb, InAs, GaSb, and GaAs. Correlation of these studies with published x-ray investigations shows that these etches reveal dislocations and truncated pyramidal pits only on {111} surfaces that are at the group III end of the polar axis. A difference in the shape of the pits on opposite {100} surfaces was found and is explained by means of the polar axes.
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