Abstract
One side c-Si/a-Si:Hheterojunction solar cells (Ag/c-Si(n)/a-Si:H(i)/a-Si:H(p)/ITO/Ag) were fabricated with and without hydrogen plasma treatment of a-Si:H(i) layer prior to the deposition of top a-Si:H(p) layer. The open circuit voltage, short circuit current density, fill factor and efficiency values for cells after plasma treatment are 613 mV, 15.15 mA/cm2, 0.57and 5.17% as compared to 436mV, 6.27 mA/cm2, 0.4 and 1.13% for cells without plasma treatment of a-Si:H(i) layer. Improvement in solar cell parameters is due to the decrease in interface recombination sites, surface dangling bonds and series resistance after H2 plasma treatment of a-Si:H(i) layer. The influence of H2 plasma on optical, structural properties of intrinsic a-Si:H films and control the thickness of intrinsic a-Si:H layer on c-Si and corning glass are also studied by Spectroscopic ellipsometry and Raman measurements.
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