Abstract
In this study, we compare the microstructure and surface morphology of hydrogenated and unhydrogenated amorphous silicon thin films deposited onto amorphous substrates (glass, SiO 2) after pulsed ArF excimer laser crystallization with energy densities ranging typically between 60 and 600 mJ/cm 2. Characterization of the films is performed by optical reflectivity, profilometry (Talystep), elastic recoil detection analysis, grazing X-ray diffraction and transmission electron microscopy. The amorphous-to-polycrystalline transition of amorphous silicon with and without hydrogen is achieved at a threshold energy density of around 80–100 mJ/cm 2. Above this value both the microstructure and surface morphology of the crystallized layers appear to be strongly related to the hydrogen content in the as-deposited films.
Published Version
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