Abstract
In this study, copper indium gallium di-selenide (Cu(In, Ga)Se2, CIGS) thin films are prepared at different heating temperatures of Se effusion cell (Tsec) between 150 °C and 190 °C. The Tsec has a great influence on the deposition rate, chemical composition, morphology and grain structure of the CIGS absorbers. The CIGS thin film solar cell fabricated at 160 °C shows best efficiency of 11.6% in this series due to the relatively higher open circuit voltage (Voc) and fill factor (FF) as well as a high short circuit current (Jsc). By further optimizing device and material properties, the higher efficiency CIGS thin film solar cell of 17.2% is achieved.
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