Abstract
This work focuses on the comparison, characterization and optimization of the current density (J) versus voltage (V) characteristics of CIGS and CZTS based thin film solar cells by using an analytical model. The model explains how the variation of parameters such as electron lifetime, hole lifetime and buffer layer material affect the J-V characteristic of CIGS and CZTS thin film solar cells. Simulation results show that the CIGS thin film solar cell gives more current density compared to CZTS thin film solar cell and ZnO material is more efficient than CdS material as a buffer layer for both CIGS and CZTS thin film solar cells. This method proposed in this research work would be very helpful to develop CIGS and CZTS based high efficiency thin film solar cells for the next generation optoelectronics applications.
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