Abstract
Cu(In,Ga)Se2 (CIGS) thin films and solar cells were studied by photoacoustic spectroscopy (PAS) which is non-contact and non-destructive characterization of optical absorption properties. As preliminary experiment, the band gap of CIGS bulk alloy crystals were characterized by PAS, photoluminescence, and electroreflectance measurements, and the utilization of PAS was examined as the characterization of CIGS alloys. Photoacoustic (PA) spectra of CIGS thin films grown on a Mo/soda-lime glass (SLG) substrate showed the existence of the deep absorption band. The deep absorption band was observed only in PA spectra of CIGS/Mo/SLG films grown by three-stage method. The microphone-based PAS method detected the signal from the deep interface in CIGS/Mo/SLG structure sensitively. On the other hand, the PA spectrum of CdS/CIGS/Mo/SLG obtained by the transparent piezoelectric photo-thermal (Tr-PPT) method showed the clear absorption edge. Therefore, microphone-based PAS and Tr-PPT measurements can give complementary absorption properties of CIGS films.
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