Abstract
The design of CMOS circuits using nanoscale MOSFET has become very difficult nowadays as device modeling faces new challenges such as short channel effects and mobility degradation. Gate engineering and channel engineering reduces these challenges and improves the mobility of the carriers, resulting in improved characteristics such as drain current and transconductance. In this review paper, the effect of gate and channel engineering on the characteristics (both D.C and high frequency (a.c)) of multigate MOSFETs have been investigated and presented.
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