Abstract
The influence of irradiation in a scanning electron microscope on the optical properties inherent to light-emitting diodes (LEDs) with multiple InGaN/GaN quantum wells, assembled by means of the flip-chip mounting technique, has been investigated via the cathodoluminescence (CL) and electron-beam-induced current methods. It is demonstrated that the action of an electron beam qualitatively varies both these LEDs and structures with a thin upper GaN layer only at large beam energies. It has been revealed that irradiation not only leads to changes in the spectrum and intensity of CL but also decreases the energy corresponding to the excitation of emission associated with quantum wells. A similar effect is also observed in structures whose external quantum efficiency has been decreased several times due to long-running tests performed at an injection current density of 35 A/cm2 and a temperature of 100°C.
Published Version
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