Abstract
Resistance changing of ion binding insulator hardly obtain large on and off resistance ratio. Resistance switching properties using Ni, W and Ti as a bottom electrode ware caused of changing resistance of Ce oxide. The influence of metal electrode on resistive switching behavior of CeOx film has been investigated. Resistance switching characteristics using NiSi2 electrode shows a large on and off window as large as 105. The main differences of the switching properties among the electrode materials are thought to be the reaction between the Ce oxide layer and electrodes. The set voltage dependence on the thickness of Ce oxide layers has indicated that the switching behavior is based on electric field.
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