Abstract

Some results are provided confirming that modifying of the zinc films fabricated on glass substrates by a resulting effect of heat treatment in an atmosphere of dry air and action of cross electric field is possible. Using scanning electron microscopy (measured with the Zeiss Merlin microscope) the surface morphology of the films was studied. Also, the elemental composition of the films by micro-X-ray spectral analysis was studied. On the glass substrates, by the method of vacuum thermal evaporation, zinc films (Zn) with thickness of ~ 500 nm were obtained. In order to form ZnO films, the original films were treated at 250 °C in a dry air atmosphere, and in another case - in addition to the sample a transverse electric field with a potential of 300 V was applied. Platinum films on the silicon dioxide layer were obtained using the method of the ion-plasma sputtering. These layers were investigated by X-ray phase analysis, electron and atomic force microscopy. The thickness of platinum layers was 50 and 100 nm. During the deposition (deposition temperature – 300 °C, deposition rate - 5 nm / min), applied voltage between the platinum film and the silicon plate was 5 V. The films, obtained by applying a biasing, showed a more homogeneous fine-grained structure and a higher rate of growth than the original samples. In this way ZnO films can be manufactured with the extended surface. The possibility of significant changes caused by electric field use in adhesion, structure and conductive properties of the coatings is discussed. The method of depositing platinum on a dielectric substrate with an additional electrostatic field is also substantiated. It is shown that the application of an electric voltage to the film leads to a significant change in the structure of the resulting coating.Forcitation:Pshchelko N.S., Vodkailo E.G., Tomaev V.V., Klimenkov B.D., Koshevoi V.L., Belorus A.O. Influence of electric field on adhesion and structure of conducting films on dielectric substances. Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol. 2017. V. 60. N 8. P. 100-104.

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