Abstract
InP1−xBix epilayers with 1.0% bismuth concentration were grown on InP(001) substrates by gas-source molecular beam epitaxy. Silicon and beryllium were doped into the InP buffer layer, and their influences on the photoluminescence (PL) emission of InPBi were investigated. The PL emission of InPBi was found to be intensified by beryllium doping into the InP buffer layer. However, there was no influence of silicon doping. To investigate the reason for the PL intensity enhancement of InPBi, the carrier transport behavior at the interface was also discussed.
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