Abstract
The deposition of GaAs and InP on Si was investigated in a plasma MOCVD (metalorganic chemical vapor deposition) system at total pressures ranging from 300 to 500 Pa (with plasma) to 10 4 Pa (without plasma). It could be demonstrated that DC plasma precracking of the hydrides AsH 3 or PH 3 allows the growth of GaAs or InP buffer layers at low temperatures and V/III ratios. The GaAs top layers grown conventionally upon the buffer showed smooth surfaces with low defect densities, good crystallinity and an intense photoluminescence (PL) response without any spectral shift. Using such a GaAs on Si structure as a substrate, InP layers with improved characteristics compared to those of InP grown directly on Si were obtained. The use of a plasma during growth of both InP buffer and top layer has proven advantageous regarding InP morphologies, X-ray and PL results.
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