Influence of Dislocations on Nitrogen–Oxygen Complex in Silicon

Abstract

The influence of dislocations on nitrogen–oxygen (N–O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N–O complexes were generated during annealing at 650 °C for 10 min. In the early stage of annealing the amount of the N–O complexes in NCZ silicon with dislocations was almost the same as in dislocation-free NCZ silicon. However, the N–O complexes in NCZ silicon with dislocations were annihilated after annealing for only 2 h, while those complexes in dislocation-free NCZ silicon were annihilated after annealing for 60 h. It is considered that the formation of N–O complexes is suppressed by dislocations and its mechanism is also discussed.