Abstract
We report on the influence of the chemical etching in the step bunching formation on GaAs (100) 0.2° off and GaAs (100) 2° off toward <010> surfaces after the oxide desorption process of the substrates at high temperatures under an H 2 ambient. The step bunches were observed by in-air atomic force microscopy. Our results reveal that step bunches were formed only on chemically etched samples desorbed under an As 4 overpressure using H 2 as the carrier. When GaAs substrates without chemical etch were deoxidized the step bunches were not observed in despite of the H 2/As 4 presence. From the results we conclude that the chemical etching strongly influence the step bunching formation.
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