Abstract
We characterized how positive and negative bias temperature instabilities (PBTI and NBTI) occur in HfSiON gate stacks. The PBTI was confirmed to be suppressed by using amorphous (a-) HfSiON instead of crystallized (c-) HfSiON. The a-HfSiON reduced the capture cross-section and lowered the density of electron traps, which explains the suppression of the PBTI. The different trap parameters for a-HfSiON and c-HfSiON suggest that the electron traps of these structures have different origins. The PBTI of a-HfSiON gates occurred through electron trapping without generation of interface traps, while the NBTI of a-HfSiON gates occurred through generation of interface traps and positive oxide charges. Furthermore, it was found that the NBTI of a-HfSiON gates also involves electron trapping. Additionally, the subthreshold slope decreased under positive BT stress. We attribute these characteristic BTI behaviors of HfSiON gates to the influence of charge traps that are present within the HfSiON bulk.
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