Abstract
The influence of the channel hole remaining ratio ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CHRR</i> ) on the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory was investigated using both simulation and experimental data. Although HC VNAND flash memory is advantageous for increasing lateral memory density, it suffers from nonuniform carrier injection and low program/erase efficiency. In this study, the underlying physics of these disadvantages are discussed in terms of the proposed parameter, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CHRR</i> . Finally, based on the analysis, a recessed channel HC VNAND flash memory cell is proposed.
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