Influence of BaSiO<sub>3</sub> Doped on the Properties of BST Capacitor Ceramics

Abstract

The influence of the BaSiO3 dopant on the dielectric properties of (Ba,Sr)TiO3(BST) capacitor ceramics was studied using conventional capacitor ceramics solid state method and XRD , SEM and other analytical methods. The results show that BaSiO3 doping can improve the sintering and microstructure of the capacitor ceramics. SEM study show that BaSiO3 doping can make grain grow uniformly and suppress the grain to grow up, and the structure of ceramics is compact with little pore. XRD study show that there is little SiO2 phase and little influence of BST lattice parameter when BaSiO3 doped amount is 3 mol%.The dielectric properties of BST ceramics doped with 3 mol% BaSiO3 are as follows: dielectric constant (εr) of 1792, which is a little higher than undoped BST ceramics, tanδ of 1%, which is decreased 7.24% compared with undoped BST ceramics, and the sintering temperature decreases 40°C.