Abstract
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (Pr) shows an increasing trend with annealing temperature, while the change in the coercive electric field (Ec) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.
Highlights
Doped ferroelectric HfO2 materials have been widely studied alongside low power logic devices and non-volatile memory due to their scalability and compatibility with traditional CMOS processes [1,2,3,4]
We systematically investigate the effect of stress on the ferroelectricity of HZO ferroelectric materials by characterizing three aspects: remnant polarization, the coercive electric field, and endurance characteristics and obtain results for the regulation of stress regarding ferroelectricity for ferroelectric materials by comparing the properties of ferroelectric materials under different annealing temperatures
The results show that the overall Pr magnitudes were similar in both conditions, but Pr in the stressed condition was larger than that in the unstressed condition when the electric field strength was below 3 MV/cm, while an opposite result was obtained when the electric field strength was higher than 3 MV/cm
Summary
Doped ferroelectric HfO2 materials have been widely studied alongside low power logic devices and non-volatile memory due to their scalability and compatibility with traditional CMOS processes [1,2,3,4]. They are widely used in micro- and nanofluidic devices [5,6]; there are still problems regarding the fatigue or poor ferroelectricity in ferroelectric materials that prevent full application, so the optimization of modification for ferroelectric materials has been an important challenge for ferroelectric materials [7], e.g., with baseline technologies the write cycles of SRAM or DRAM is more than 1016, whereas the endurance of HfO2-based FeRAM is about 105 to 1010 [8,9,10] and Hf-based ferroelectric devices have so far been unable to achieve an endurance comparable to that of the conventional memory devices [11]. Stress may have an effect on the ferroelectricity and fatigue characteristics of ferroelectric materials; little research has been reported on the effect of stress on the ferroelectricity of Hf-based ferroelectric materials
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