Abstract
The influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions (ISBTs) in AlN/GaN coupled double quantum wells (CDQWs) has been investigated by solving the Schrödinger and Poisson equations self-consistently. It is found that the absorption coefficient of the ISBT between the ground state and the second excited state (1odd–2odd) can be equal to zero when the electric fields are applied in AlN/GaN CDQWs, which is related to the applied electric field induced symmetry recovery of these states. Meanwhile, the energy distances between 1odd–2odd and 1even–2odd subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and right wells. The results indicate that an electrical-optical modulator operated within the optocommunication wavelength range can be realized in spite of the strong polarization-induced electric fields in AlN/GaN CDQWs.
Published Version
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