Abstract
The influence of polarization-induced electric fields on the coherent electron tunneling probability in AlN/GaN coupled double quantum wells (CDQWs) has been performed by solving Schrödinger and Poisson equations self-consistently. It is found that when the first excited state (E2) and the second excited state (E3) resonate in AlN/GaN CDQWs, the coherent electron tunneling probability is 16 times higher than that in AlN/GaN single quantum well, which is attributed to the Fabry–Perot quantum interference mechanism in AlN/GaN CDQWs. However, the coherent electron tunneling probability decreases rapidly with the polarization-induced electric fields increasing, which is attributed to the resonance between the E2 and E3 subbands weakening with the polarization-induced electric fields increasing in AlN/GaN CDQWs.
Published Version
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