Abstract
In this study, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and the Hall effect were used to characterize the microscopic morphology, structural features and electrical properties of a HgCdTe film surface before and after annealing. The effect of annealing on the surface quality of the films was studied in detail. The results showed that the annealing treatment reduced the roughness, improve the denseness and uniformity and ameliorate the surface crystallinity. It also eliminated the defects, such as stress and stacking layer errors, caused by lattice distortion during the growth of the HgCdTe films. An increase in surface carrier concentration and mobility after annealing and improved electrical properties of the intrinsic p-type HgCdTe materials were also observed. It is therefore shown that annealing had a significant effect on improving the surface quality of HgCdTe films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
