Abstract
Field emission from individual tips in a silicon field emitter array (FEA) has been directly evaluated by using an electrostatic lens projector. Uniformity of the emission sites in n- and p-type Si FEAs has been investigated and compared at various conditions. The number of the emission spots in the p-type FEA increased linearly with the increase in the total emission current, and the p-type FEA exhibited better uniformity of the emission spots especially under large emission currents than the n-type FEA. Furthermore, effects of the gas ambient on the emission uniformity were evaluated. The emission uniformity was improved dramatically by exposing C2H4 ambient during the field emission.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call