Abstract
Tin-doped indium oxide (ITO) films were deposited successfully by the dip coating process onto Corning 7059 glass substrates using an ethanol solution of indium (III) chloride, InCl 3·3.5H 2O and tin (II) chloride, SnCl 2·2H 2O [Sn/(In+Sn), 5 atm.%] with a surfactant, which improved the contact between the glass substrate and the coating solution. Film thickness and the resistivity were investigated as a function of the withdrawal rate and the number of repeated dip coatings. The 10-layer films were annealed in a N 2–0.1%H 2 atmosphere by which the carrier concentration and the mobility increased; the lowest resistivity obtained was 5.7×10 −4 Ω cm (film thickness: 57 nm; carrier concentration: 4.8×10 20 cm −3, mobility: 20 cm 2 V −1 s −1).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
