Abstract
Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm2, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.
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