Abstract
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs were extensively studied in III–V and II–VI semiconductor heterostructures where IX range of existence has been limited to low temperatures. Here, we present the observation of IXs at room temperature in van der Waals transition metal dichalcogenide (TMD) heterostructures. This is achieved in TMD heterostructures based on monolayers of MoS2 separated by atomically thin hexagonal boron nitride. The IXs we realize in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD and their energy is gate controlled. The realization of IXs at room temperature establishes the TMD heterostructures as a material platform both for a field of high-temperature quantum Bose gases of IXs and for a field of high-temperature excitonic devices.
Highlights
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices
IX energy, lifetime, and flux can be controlled by voltage that is explored for the development of excitonic devices
Excitonic devices with IXs were demonstrated so far at temperatures below ~100 K. These devices include traps, lattices, conveyers, and ramps, which are used for studying basic properties of cold IXs, as well as excitonic transistors, routers, and photon storage devices, which hold the potential for creating excitonic signal processing devices and excitonic circuits, a review of excitonic devices can be found in ref. 3
Summary
Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor materials and for the development of excitonic devices. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures[4] are characterized by high binding energies making them stable at room temperature and giving the opportunity for exploring hightemperature quantum Bose gases in materials and for creating excitonic devices operational at room temperature, the key for the development of excitonic technology[5,6,7]. The temperature of quantum degeneracy, which can be achieved with increasing density before excitons dissociation to electron–hole plasma, scales proportionally to Eex[5] These considerations instigate the search for material systems where IXs have a high-binding energy and, as a result, can provide the medium for the realization of high-temperature coherent phenomena and excitonic devices
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