Independently contacted double quantum well structure fabricated by molecular beam epitaxial regrowth

Abstract

Molecular beam epitaxial regrowth over a patterned substrate has been used to produce independent contacts to the two-dimensional electron gases in a double quantum well structure. Optimization of the growth conditions and incorporation of a buffer layer at the regrowth interface are critical to the success of these devices. This simple method provides a means of realizing full wafer production and increases the capability of producing mesoscopic devices in multiconducting layer systems.