Integrated photoreceiver array using molecular beam epitaxial regrowth

Abstract

A photoreceiver linear array of 8-elements each composed of a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As modulation doped field effect transistor (MODFET) using molecular beam epitaxial (MBE) regrowth is investigated. MBE selective area regrowth enables a planarized monolithic integration with reduced parasitic capacitance over vertical monolithic integration. Cutoff frequencies (f/sub T/ and f/sub max/) of 58 GHz and 67 GHz and 24 GHz and 51 GHz were determined for as-grown and regrown MODFETs, respectively. A 3-dB bandwidth of 1 GHz was measured for the circuit. The bandwidth of the circuit is limited by the photodiode response. >