Abstract
In this paper, we introduce an independent gate p-type tunneling field-effect transistor using double heterojunction structures (IG-DHJ-pTFET), which has the characteristics of high turn-on current (ION) and high turn-on/turn-off current (ION/IOFF) ratio. The double heterojunction structures consist of an AlInAsSb/InGaAs heterojunction and an InGaAs/GaAsSb heterojunction, which shorten the tunnel distance and improve the on state tunneling probability. We optimize the leakage currents of the IG-DHJ-pTFET devices by varying gate-on-drain overlapping. We obtain high-threshold and low-threshold IG-DHJ-pTFETs by adjusting the gate work function. The TCAD simulation results show that the proposed high-threshold and low-threshold IG-DHJ-pTFETs are logically equivalent to two short-gate (SG) transistors in series and parallel, respectively, with excellent electrical characteristics. The proposed dual-threshold IG-DHJ-pTFETs using double heterojunction structures can reduce the number of transistors used in circuits.
Published Version
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