Abstract
The electron mobility determined by electron-confined optical phonon scattering in GaAs quantum well (QW) of AlGaAs/GaAs/AlGaAs double heterojunction structure (DHS) is considered. The mobility increase due to intersubband population redistribution in the DHS with an inserted phonon wall is obtained. In the modulation doped DHS (nS = 6×1015 m—2) the mobility decrease is observed when the GaAs QW width becomes less than 15 nm.
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