Abstract
Many factors have been confirmed to affect ferroelectric phase formation in HfO2-based thin films but there was still a lack of general view on describing them. This paper discusses the intrinsic parameters to stabilize the ferroelectric phase of HfO2 thin films to approach this general view by investigating the separate effects of dopant, oxygen vacancy (VO), and specific surface area on the crystal phase of the films. It is found that in addition to extensively studied dopants, the ferroelectric orthorhombic phase can also be formed in pure HfO2 films by only introducing sufficient VO independently, and it is also formable by only increasing the specific surface area. By analyzing the common physics behind these factors, it is found that orthorhombic phase formation is universally related to strain in all the above cases with a given temperature. To get a general view, a physical model is established to describe how the strain influences ferroelectric phase formation during the fabrication of HfO2-based films based on thermodynamic and kinetics analysis.
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