Abstract
Compositionally uniform 2 and 10 mm diameter Si0.5Ge0.5 bulk crystals have been grown by the traveling liquidus-zone (TLZ) method. The TLZ method requires diffusion controlled mass transport in a melt and crystal size was limited for suppressing convection in a melt. For substrate use, however, larger diameter crystals are required. Increase of crystal diameter was challenged in spite of the concern that compositional homogeneity of grown crystals might be degraded due to faster convective flow in a larger diameter melt. As a result, however, increase of crystal diameter was possible up to 30 mm although single crystal length was limited to 5 mm. Si0.55Ge0.45 and Si0.6Ge0.4 bulk crystals with 30 mm diameter showed excellent compositional homogeneity and high crystallinity without mosaicity.
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