Crystallographic investigation of homogeneous SiGe single crystals grown by the traveling liquidus-zone method

Abstract

Crystallographic investigation of Si 0.5Ge 0.5 single crystals grown by the traveling liquidus-zone (TLZ) method was carried out using an X-ray diffraction method, a back-reflection Laue camera and X-ray rocking curve measurements. X-ray rocking curve of the Si 0.5Ge 0.5 crystals showed excellent crystallinity: full-width at half-maximum (FWHM) of the (4 4 0) diffraction was 0.009°, which is comparable to that of Si single crystal. Such high-quality Si 0.5Ge 0.5 bulk crystals were obtained for the first time and showed the superiority of the TLZ growth method for growing alloy bulk crystals.