InAsSb Single Crystals and Photoconductors with Cutoff Wavelengths Longer than 8 µm

Abstract

High sensitivity uncooled InAsSb photoconductors with cutoff wavelengths longer than 8 mm were experimentally validated. The detectors were fabricated using InAs0.052Sb0.948 and InAs0.023Sb0.977 single crystals grown on InAs substrates by melt epitaxy (ME). The thickness of the epilayers was 50 mm. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10 m. Peak detectivity Dλp* (6.5 mm, 1200 Hz) reached 5.4 × 109 cm Hz1/2 W-1 for InAs0.052Sb0.948 immersed detectors. The detectivity D* was 9.3 × 108 and 1.3 × 108 cm Hz1/2 W-1 at the wavelength of 8 and 9 mm respectively. The good performances of InAsSb detectors indicate the possible detection applications