Abstract
InAs<sub>0.92</sub>Sb<sub>0.08</sub> and InAs<sub>0.06</sub>Sb<sub>0.94</sub> epilayers have been grown on InAs substrates by liquid phase epitaxy (LPE) and melt epitaxy (ME) respectively. InAsSb epilayers grown by LPE and ME have been firstly observed by a high temperature laser scanning confocal microscopy (LSCM) . X-ray diffraction (XRD) measurements confirmed that the lattice constant of InAs<sub>0.92</sub>Sb<sub>0.08</sub> epilayers grown by LPE is 6.0912 Å, while that of InAs<sub>0.06</sub>Sb<sub>0.94</sub> epilayers grown by ME is 6.4520 Å. Uncooled photoconductors were fabricated using InAs0.06Sb0.94 thick epilayers grown by ME. The photoresponse wavelength range of InAs<sub>0.06</sub>Sb<sub>0.94</sub> detectorsis 2-10 μm. At 295 K, the peak detectivity D<sub>λp</sub>* is 3.59 × 10<sup>9</sup> cm Hz<sup>1/2</sup>W<sup>-1</sup> at the wavelength of 6.5 μm, and the detectivity D* is 1.0 × 10<sup>9</sup> , 2.1 × 10<sup>8</sup> and 1.0 × 10<sup>8</sup> cm Hz<sup>1/2</sup>W<sup>-1</sup> at 8, 9 and 10 μm for the detectors with Ge immersion lenses respectively
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