Abstract
In this paper, the optimal conditions for growth of homoepitaxial InAs layer on InAs (001) substrate by molecular beam epitaxy were investigated over wide growth temperatures and As/In flux ratios. The oxide remove process is important and both the As/In flux ratio and growth temperature is in narrow range for InAs homoepitaxy. The high quality homoepitaxy has an RMS surface roughness of 0.26nm measured by atomic force microscopy. High quality lattice matched InAs/AlSb/GaSb/InAs/AlSb/InAs double barrier resonant interband tunneling diodes was grown on InAs (001) substrate on the optimal condition. It shows high peak–valley current ratios of 105 at 77K and 15 at room temperature.
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