Abstract
An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1×104 A/W and a response up to several pA per photon at room temperature were found.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
