Year-end Sale % OFF 
Abstract
In order to establish an indium content of more than 30% in pseudomorphic Al x Ga 1- x As⧸In y Ga 1- y As HFET, a highly strained In y Ga 1- y As/GaAs graded superlattice as active channel is introduced. The superlattice is designed to utilize a thin layer of of In 0.4Ga 0.6As at the location of the maximum probability density of electrons. Smoothing of the In y Ga 1- y As surface is provided by the overgrowth of GaAs monolayers as demonstrated by RHEED intensity oscillations. The quality of the superlattice channel is confirmed by high resolution STEM analysis. Optimization of MBE growth parameters, transport properties and device performance is reported.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
