In-well ambipolar diffusion in room-temperature InGaAsP multiple quantum wells

Abstract

Three-pulse transient amplitude grating experiments were performed using picosecond pulses at 1.525 /spl mu/m on room-temperature InGaAsP multiple quantum wells using a periodically poled LiNbO/sub 3/ (PPLN) optical parametric oscillator. An ambipolar diffusion coefficient of 7.2 cm/sup 2//s was measured from the diffraction efficiency decay rates. We deduce the presence of alloy scattering or an increase in interface scattering when comparing these results with those of similar experiments on GaAs-AlGaAs multiple quantum wells.