Abstract
Metal silicides in thin films play an essential role in the increasingly fine-scale fabrication of integrated circuits. Although commonly produced by interfacial reaction between metal films and silicon, buried metal silicides have recently been produced in crystalline Si by ion-implantation. Cammarata et al., have reported the use of ion-implantation to form buried nickel silicide precipitates in amorphous Si thin films, in which the first (and only) phase to form was NiSi2. The kinetics of the nucleation and growth of NiSi2 precipitates were investigated and an enhancement of the crystallization kinetics of the amorphous Si, apparently due to the migration of silicide precipitates, was found. In this paper, we describe the results of an in-situ transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) investigation of the silicide-mediated crystallization of amorphous Si.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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