Abstract
Interfacial reaction in bilayers of amorphous Si and crystalline Rh thin films has been studied by transmission electron diffraction and microscopy. In a bilayer of ∼190-Å amorphous Si and ∼60-Å polycrystalline Rh films, we have observed the formation of an amorphous Rh-Si alloy film upon thermal annealing at 300 °C. The amorphous alloy film crystallizes into the RhSi phase at 400 °C. On the other hand, no amorphous alloy formation was observed upon annealing a bilayer of ∼150-Å amorphous Si and ∼100-Å polycrystalline Rh films; instead, they react at 300 °C to form Rh2Si, followed by the formation of RhSi or a mixture of RhSi and Rh5Si3 around 400 °C.
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