Abstract
ABSTRACTIn this paper we discuss the size-dependent shrinkage rate of nanometer-size Si crystals in amorphous Si thin films during ion irradiation. We obtain shrinkage rate of nanometersize crystals at low temperature under ion irradiation by studying the evolution of the crystal size distribution using transmission electron microscopy. Our results indicate that crystals less than 10 nm in diameter decrease in size faster than larger crystals under ion irradiation. In addition, we fit our data to a capillary model for growth of Si crystals in amorphous Si under ion irradiation.
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