Abstract
We have performed in situ resistance measurements for individual epitaxial CoSi2 nanowires (NWs) (approximately 60 nm wide and 5μm long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 107Ω. The resistivity of the NWs was 30μΩcm, which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.
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