Abstract
We have measured electrical resistance of individual epitaxial CoSi2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 107 Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi2 films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface. [DOI: 10.1380/ejssnt.2005.362]
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