Abstract
Surface reaction triggered by N 2 laser irradiation onto adsorbed triethylgallium (TEGa) and reaction with phosphorus in chemical beam epitaxy (CBE) was studied by growth experiment and intensity change of reflection high-energy electron diffraction (RHEED). The growth rate shows saturation with a high TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation was different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately under continuous supply of TEGa and PH 3.
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