Abstract

Perovskite quantum dots (PQDs) hold immense potential for application in backlight liquid crystal display (LCD) owing to their narrow emission spectra, tunable luminous wavelength along with high photoluminescence quantum yield. However, their poor stability severely impedes the practical application of PQDs in optoelectronic devices. Here, we prepare KSF@PQDs composites by in-situ generation of green-emitting MAPbBr3 PQDs on the surface of treated KSF:Mn red phosphors. The surface treatments on KSF:Mn are employed for realization of in-situ passivation and anchoring of MAPbBr3 through chemical interaction between the NH2 group on KSF:Mn and Pb2+ on PQDs, which enables high luminescence intensity, narrow spectral width and simultaneously high photostability of PQDs. Moreover, the ratio of green-to-red emission intensity in KSF@PQDs can be easily modulated by changing APTES content during the surface treatment of KSF:Mn. Further, white light-emitting diode devices consisting of InGaN chip and KSF@PQDs composite achieve luminous efficiency of 41.6lm·W-1, as well as wide color gamut of 116.6% for National Television Systems Council standard and 87.2% for Rec.2020 standard, which paves the way for the application of high stability PQDs in wide color gamut LCD.

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