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Abstract
We have performed in situ observation of the chemical vapor deposition (CVD) of silicon carbide (SiC), and investigated the relationship between the growth conditions and generation of clusters in the gas phase of the H2–SiH4–C3H8 gas system to realize the high-speed growth of SiC by CVD. It was found that cluster generation can be suppressed by decreasing the partial pressure of the process gases, i.e., increasing the H2 carrier gas flow rate, and decreasing the pressure and process gas flow rate. We concluded that clusters in the gas phase consist of not only Si droplets, but also SiC particles.
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