Abstract
We deposited silicon carbide (SiC) by the chemical vapor deposition (CVD) method using the inert gases Ar and He. It was confirmed that SiC deposited with inert gases had a porous microstructure and high carbon content. We also studied the thermoelectric properties. SiC deposited with He gas had lower electrical and thermal conductivity compared with SiC deposited with Ar gas. Both samples using Ar and He exhibited a negative Seebeck coefficient, indicating n-type semiconductor behavior. The calculated figure of merit (Z) of SiC deposited with inert gases was improved compared with SiC deposited with H2 or N2 gas. The value for SiC deposited with He was higher than that for SiC deposited with Ar. The thermoelectric properties of porous silicon carbide deposited with inert gases were also compared with those of silicon carbide deposited with hydrogen or nitrogen gas.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
