Abstract
We demonstrated in situ monitoring of surface processes in plasma, using coaxial impact-collision ion scattering spectroscopy (CAICISS) operable in a gas atmosphere, taking the plasma nitridation processes of Si surfaces with (111) and (001) faces as examples. From the results of real-time monitoring of CAICISS spectra, it was found that (1) the top layer of the Si(111) surface is readily nitrided even at room temperature, while the Si(001) surface requires thermal activation for its nitridation and that (2) at a high temperature, the nitridation of Si(001) proceeds to layers deeper than in the case of Si(111).
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