Abstract
The epitaxial growth of CaF2 on a Si(111) substrate has been monitored in situ with a novel form of low-energy ion scattering spectroscopy, or coaxial impact-collision ion scattering spectroscopy (CAICISS), which can “see” not only the near-surface one or two atomic layers but subsurface several atomic layers by virtue of its 180 ° experimental scattering angle. In the course of this study, it has been found that an extra compound is formed at the CaF2/Si(111) interface in a certain condition. Through the composition and structure analysis of the extra compound with CAICISS, the extra compound has been identified to be CaSi2 epitaxially grown on the Si(111) substrate. To our knowledge, this is the first “bulk” crystral structure analysis with a low-energy ion beam. In this way, a new field which should be called “low-energy ion-beam crystallography” has been opened.KeywordsAtomic LayerEpitaxial GrowthRutherford Backscattering SpectroscopyCrystal Structure AnalysisExtra PeakThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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