Abstract

Based on conventional coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA), we have developed a novel ion scattering and recoiling spectrometer equipped with a differential pumping system for in situ monitoring of surface processes in gas phase atmosphere in the pressure regime up to 10-4 Torr. In order to demonstrate the performance of this apparatus, we have applied it to real-time monitoring of Ge thin film growth on a Si(001) surface in atomic hydrogen (H) atmosphere. The morphology of Ge thin films and H coverage on the growth front during the growth in H atmosphere were successfully observed.

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